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专利名称：Method and apparatus for measuring
thickness of thin film and devicemanufacturing method using same
发明人：Mineo Nomoto,Takenori Hirose,Keiya Saito申请号：US10082430申请日：20020222公开号：US07119908B2公开日：20061010
专利附图：
摘要：A manufacturing method and manufacturing device for high-precision thin filmdevices is disclosed, whereby the film thickness and film thickness distribution of a
transparent film is measured to a high degree of accuracy during a CMP process withoutbeing affected by the film thickness distribution between LSI regions or within thesemiconductor wafer surface generated by CMP processing. Film thickness is measuredby specifying relatively level measurement regions, according to a characteristic quantityof the spectral waveform of the reflected light from the transparent film, such as thereflection intensity, frequency spectrum intensity, or the like, thereby permitting highlyaccurate control of film thickness. The leveling process in CMP processing can be
optimized on the basis of the film thickness distribution. The film deposition conditions inthe film deposition stage and the etching conditions in the etching stage can also beoptimized. Accordingly, a high-precision semiconductor device can be manufactured.
申请人：Mineo Nomoto,Takenori Hirose,Keiya Saito
地址：Yokohama JP,Machida JP,Hiratsuka JP
国籍：JP,JP,JP
代理机构：Townsend and Townsend and Crew LLP
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