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专利名称：Punch through stopper for semiconductor
device
发明人：Effendi Leobandung,Tenko Yamashita申请号：US14962101申请日：20151208公开号：US09508833B1公开日：20161129
专利附图：
摘要：A method for forming a semiconductor device comprises, forming a fin on asemiconductor substrate, forming spacers adjacent to the fin, etching to remove exposedportions of the semiconductor substrate adjacent to the spacers to form a trench
adjacent to the spacers, removing the spacers, implanting dopants in the semiconductorsubstrate adjacent to the fin and in the trench, and performing an annealing process todiffuse the dopants in the semiconductor substrate and form a punch through stopperregion below the fin that includes the dopants.
申请人：International Business Machines Corporation
地址：Armonk NY US
国籍：US
代理机构：Cantor Colburn LLP
代理人：Vazken Alexanian
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