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专利名称：Field effect transistor and method for
manufacturing the same
发明人：Ho Kyun Ahn,Jong Won Lim,Jae Kyoung
Mun,Hong Gu Ji,Woo Jin Chang,Hea CheonKim
申请号：US12122805申请日：20080519公开号：US07902572B2公开日：20110308
专利附图：
摘要：A field effect transistor having a T- or Γ-shaped fine gate electrode of which a
head portion is wider than a foot portion, and a method for manufacturing the fieldeffect transistor, are provided. A void is formed between the head portion of the gateelectrode and a semiconductor substrate using an insulating layer having a multi-layerstructure with different etch rates. Since parasitic capacitance between the gateelectrode and the semiconductor substrate is reduced by the void, the head portion ofthe gate electrode can be made large so that gate resistance can be reduced. In addition,since the height of the gate electrode can be adjusted by adjusting the thickness of theinsulating layer, device performance as well as process uniformity and repeatability canbe improved.
申请人：Ho Kyun Ahn,Jong Won Lim,Jae Kyoung Mun,Hong Gu Ji,Woo Jin Chang,HeaCheon Kim
地址：Daejeon KR,Daejeon KR,Daejeon KR,Daejeon KR,Daejeon KR,Daejeon KR
国籍：KR,KR,KR,KR,KR,KR
代理机构：Ladas & Parry LLP
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