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METHOD OF GROWING A THIN FILM ONTO A SUBSTRATE

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专利内容由知识产权出版社提供

专利名称:METHOD OF GROWING A THIN FILM ONTO

A SUBSTRATE

发明人:LINDFORS, Sven,SOININEN, Pekka, T.申请号:EP01958109.9申请日:20010720公开号:EP1322797B1公开日:20061213

摘要:The present invention relates to the production of thin films. In particular, theinvention concerns a method of growing a thin film onto a substrate, in which method thesubstrate is placed in a reaction chamber and is subjected to surface reactions of aplurality of vapor-phase reactants according to the ALD method. The present invention isbased on replacing the mechanical valves conventionally used for regulating the pulsingof the reactants, which valves tend to wear and intrude metallic particles into the processflow, with an improved precursor dosing system. The invention is characterized bychoking the reactant flow between the vapour-phase pulses while still allowing aminimum flow of said reactant, and redirecting the reactant at these times to an otherdestination than the reaction chamber. The redirection is performed with an inactive gas,which is also used for ventilating the reaction chamber between the vapour-phase pulses.

申请人:ASM INT

地址:NL

国籍:NL

代理机构:Sundman, Patrik Christoffer

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