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专利名称：Apparatus and method for electrical
measurement of semiconductor wafers
发明人：Sadao Hirae,Hiroshi Okada,Hideaki
Matsubara
申请号：US08/460053申请日：19950602公开号：US05504437A公开日：19960402
摘要：A stage 130 includes a metal base and an anti-metal contamination film formedon the metal base a semi-conductor wafer 120. The anti-metal contamination film isconstructed of a material selected from the group consisting of a semi-conductor film, asemi-conductor oxide film, a semi- conductor nitride film, a semi-conductor carbide film,and a polytetrafluoroethylene film. The rear face of the semi-conductor wafer 120mounted on the stage 130 is in direct contact with the anti- metal contamination film butnot with the metal surface. The anti-metal contamination film, which does not containsimple substances of metals, effectively protects the rear face of the semi-conductorwafer 120 from contamination metal.
申请人：DAINIPPON SCREEN MFG. CO., LTD.
代理机构：Ostrolenk, Faber, Gerb & Soffen
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