SILICON EPITAXIAL PLANAR
SWITCHING DIODE
REVERSE VOLTAGE: 75VFORWARD CURRENT: 150mA
FEATURES• Small glass structure ensures high reliability• Fast switching• Low leakage• High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tensionSHANGHAI SUNRISE ELECTRONICS CO., LTD.IN4148TECHNICALSPECIFICATION
DO - 351.0 (25.4)MIN..060 (1.5).090 (2.3)DIA..120 (3.0).200 (5.1)MECHANICAL DATA• Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C• Case: Glass,hermetically sealed• Polarity: Color band denotes cathode• Mounting position: Any1.0 (25.4)MIN..018 (0.46).022 (0.56)DIA.Dimensions in inches and (millimeters)MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage
Peak Reverse VoltageForward Current (average)
Repetitive Forward Peak Current Forward Voltage (IF=10mA)Reverse Current (VR=20V)Reverse Current (VR=75V)
SYMBOLVALUEUNITS
VRVRMIOIFRMVFIR1
IR2Reverse Current (VR=20V,TJ=100oC)
Capacitance(note 1)Ct
IFReverse Recovery Time(note 2)
Rθ(ja)Thermal Resistance (junction to ambient)(note 3)
TSTG,TJOperating Junction and Storage Temperature Range-55 +175
Notes:
1: VR=0V, f=1 MHz
2: IF=10mA to IR=1mA, VR=6V, RL=100
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
75100150300125550440.35
VVmAmAVnAµAApFnS
o
C/mWoC
http://www.sse-diode.com
