【南京南山半导体有限公司 — 长电贴片三极管选型资料】www.nscn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
MMBT2222A TRANSISTOR (NPN)
FEATURES
z Epitaxial planar die construction
z Complementary PNP Type available(MMBT2907A)
MARKING: 1P
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg Parameter Value Unit Collector-Base Voltage 75 V 40 V Collector-Emitter Voltage 6 V Emitter-Base Voltage Collector Current -Continuous 600 mA Collector Dissipation 300 mW Thermal Resistance, Junction to Ambient 417 ℃/W Junction Temperature 150 ℃ Storage Temperature -55~+150℃
SOT-23 Plastic-Encapsulate Transistors
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
Symbol
Test conditions
Min Typ Max Unit
IC= 10μA, IE0 75 V V(BR)CBO =*
IC= 10mA, IB0 40 V V(BR)CEO =
=IE=10μA, IC0 6 V V(BR)EBO
VCB=60V, IE0 0.01 μA ICBO =ICEX
VCE=30V,V= 0.01 μA BE(off)3V VEB= 3V, IC0 0.1 μA IEBO =hFE(1) *
VCE=10V, IC= 150mA VCE=10V, IC= 0.1mA VCE=10V, IC= 500mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz
IC=150mA , IB1= 15mA
100 40 42
300 1 0.3 2.0 1.2
V V
DC current gain hFE(2)
*
hFE(3)
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
*
VCE(sat)
VBE(sat) fT
*
300 MHz
10 ns td VCC=30V, VBE(off)=-0.5V tr
25 ns 225 ns tS VCC=30V, IC=150mA tf
IB1=-IB2=15mA
60 ns B,Nov,2011
Typical Characterisitics
Static Characteristic
0.25
COMMON EMITTER1mATa=25℃0.9mA)0.20
A0.8mA( C0.7mAI TN0.150.6mAERR0.5mAU C R0.10
O0.4mATCE0.3mALLO0.05
C0.2mAIB=0.1mA0.00
024681012COLLECTOR-EMITTER VOLTAGE VCE (V)V CEsat —— IC0.5
β=10N0.4
OITARU)TV( A 0.3
S ta sRECETV T IMEEG0.2
-AT=100℃RTaOLTOCVEL0.1
LOTa=25℃C0.0
110100600COLLECTOR CURRENT IC (mA)IC —— VBE600COMMON EMITTERVCE=10V)A100
m( CI TNTa=100℃E10
RR UTCa=25℃ ROTCE1
LLOC0.10.00.20.40.60.81.0BASE-EMMITER VOLTAGE VBE (V)f500
T —— ICCOMMON EMITTERVCE=20V f=200MHz)zTa=25℃HM( Tf YCNEU Q ERF NOITSNART10010
80
COLLECTOR CURRENT I
C (mA)MMBT2222A
hFE ——
I500CCOMMON EMITTERVCE=10V400EFh T a=100℃ N300IAG TN ERR200Ta=25℃UC CD10000.1110100600COLLECTOR CURRENT IC (mA)VBEsat —— I1.2CNOIa=25℃T)0.8TAVR( U tTasAEBS V TR a=100℃ E TETGIMAT0.4EL-EOSVABβ=100.0110100600COLLECTOR CURRENT IC (mA)Cob/ Cib —— VCB/ VEB100f=1MHzIE=0/ IC=0CTiba=25℃)Fp( C EC10Cob NATICAPAC10.111020REVERSE VOLTAGE V (V)Pc —— T 400aNO300ITAPISS)IDW RmE( 200 W cOPP R O TCE100LLOC00
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
B,Nov,2011
【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cn
SymbolAA1A2bcDEE1ee1LL1θDimensions In MillimetersMin.Max.0.9001.1500.0000.1000.9001.0500.3000.5000.0800.1502.8003.0001.2001.4002.2502.5500.950 TYP.1.8002.0000.550 REF.0.3000.5000°8°Dimensions In InchesMin.Max.0.0350.0450.0000.0040.0350.0410.0120.0200.0030.0060.1100.1180.0470.0550.00.1000.037 TYP.0.0710.0790.022 REF.0.0120.0200°8°
The bottom gasket
Label on the Reel 3000×15 PCS
3000×1 PCS
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape Seal the box with the tape QA Label
Label on the Inner Box
Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box
Outer Box: 440 mm× 440 mm× 230 mm
